isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Min...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current, ·low voltage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
50
A
Ptot
Total Dissipation@TC=25℃
130
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK1635
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=25A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=60V; VGS= 0
2SK1635
MIN TYP MAX UNIT
60
V
1.0
5.0
V
0.03
Ω
±100 nA
500
uA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment wh...