2SK1667
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switc...
2SK1667
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
G
123
REJ03G0964-0200 (Previous: ADE-208-1308)
Rev.2.00 Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1667
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch
Tstg
Item
Symbol
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery time
trr
Note: 1. Pulse test
Min 250 ±30 — — 2.0 —
3.0 — — — — — — — — —
Typ — — — — — 0.4
5.0 690 265 45 13 55 65 37 1.0 180
Ratings 250...