DAP222M

Data Sheet Switching Diode DAP222M Applications Ultra high speed switching Dimensions (Unit : mm) Features 1) Ultra small mold type. (VMD3) 2) High reliability. 1.2±0.1 0.32±0.05 (3) 0.13±0.05 0～0.1 Construction Silicon epitaxial planar 0.22±0.05 (1) (2) 0.22±0.05 0.4 0.4 0.5±0.05 ROHM : VMD3 dot (year week factory) Taping specifications (Unit : mm) 4.0±0.07 2.0±0.04 φ1.55±0.05 0.8±0.1 1.2±0.1 0.45 0.45 1.15 Land size figure (Unit : mm) 0.8 0.5 0.4 0.4 VMD3 Structure 0.3±0.1 1.75±0.07 3.5±0.05 8.0±0.1 1.35±0.05 　0 5.5±0.2 0～0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Forward voltage (Single) Average rectified forward current (Single) VRM VR IFM Io Surge current (t=1us) Power dissipation Isurge Pd Junction temperature Tj Storage temperature Tstg 1.3±0.05 　　　 0 (4.0±0.1) Limits 80 80 300 100 4 150 150 55 to 150 2.0±0.05 φ0.5±0.05 Unit V V mA mA A mW °C °C 0.6±0.05 0 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Capacitance between terminals VF IR Ct - - 1.2 - 0.1 - 3.5 Reverse recovery time trr - - 4 Unit Conditions V IF=100mA μA VR=70V pF VR=6V , f=1MHz ns VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) DAP222M 　 Data Sheet REVERSE CURRENT:IR(nA) 100 Ta=75℃ 10000 Ta=125℃ 1000 10 Ta=15...