leakage diode. MMBD1504A Datasheet

MMBD1504A diode. Datasheet pdf. Equivalent


WILLAS MMBD1504A
High conductance low leakage diode
MMBD1501A/1503A/
1504A/1505A
FEATURES
z Two element incorporated
into one package.
(Emitter-coupled transistors)
z Reduction of the mounting area and
assembly cost by one half.
z RoHS product for packing code suffix "G",
Halogen free product for packing code suffix "H".
z Moisture Sensitivity Level 1
MMBD1501A
MMBD1504A
MMBD1503A
MMBD1505A
APPLICATIONS
z For general application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
MMBD1501A
MMBD1503A
MMBD1504A
MMBD1505A
A11
A13
A14
A15
Package Code
SOT-23
SOT-23
SOT -23
SOT -23
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol
Limits
Reverse Voltage
VR 200
Average rectified current
VF(AV)
200
Forward Continuous Current
Peak forward current (1.0s)
(1.0m)
Power Dissipation
IFM
IFSM
Pd
700
1.0
2.0
350
Thermal resistance,Junction to ambient RθJA
357
Storage temperature
TSTG
-55-150
Unit
V
mA
mA
A
mW
/W
2012-1
WILLAS ELECTRONIC CORP.


MMBD1504A Datasheet
Recommendation MMBD1504A Datasheet
Part MMBD1504A
Description High conductance low leakage diode
Feature MMBD1504A; High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Two element incorporate.
Manufacture WILLAS
Datasheet
Download MMBD1504A Datasheet




WILLAS MMBD1504A
High conductance low leakage diode
MMBD1501A/1503A/
1504A/1505A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Diode Capacitance
Symbol
V(BR)R1
Min.
200
VF
IR
CD
Max.
0.75
0.85
0.95
1.1
1.3
1.50
1.0
10
4
Unit
V
V
nA
pF
Test Conditions
IR=5μA
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=125V
VR=180V
VR=0V,f=1MHz
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified



WILLAS MMBD1504A
High conductance low leakage diode
MMBD1501A/1503A/
1504A/1505A
2012-1
WILLAS ELECTRONIC CORP.





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