MMBD1503A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD1503A FEATURES  Low Leakage  High Conductance MARKING: A13 SOT-23 A13 A13 Solid dot = Green molding compound device,if none,the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VR DC Blocking Voltage IO Continuous Forward Current IFM Peak Forward Current IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature Value 200 200 700 2.0 350 357 150 -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Symbol V(BR) IR VF Ctot Test conditions IR=5μA VR=180V IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0V,f=1MHz Min 200 Unit V mA mA A mW ℃/W ℃ ℃ Typ Max 10 0.75 0.85 0.95 1.1 1.3 1.5 4 Unit V nA V pF www.cj-elec.com 1 B,Nov,2014 Typical Characteristics Forward Characteristics 300 100 T =100℃ a T =25℃ a 10 FORWARD CURRENT I (mA) F CAPACITANCE BETWEEN TERMINALS C (pF) T 1 0.4 2.0 1.5 0.6 0.8 1.0 FORWARD VOLTAGE V (V) F 1.2 Capacitance Characteristics T =25℃ a f=1MHz 1.0 0.5 0.0 0 5 10 15 20 REVERSE VOLTAGE V (V) R POWER DISSIPATION P (mW) D REVERSE CURRENT I (nA) R Reverse Characteristics 100 T =100℃ a 10 1 T =25℃ a 0.1 0.01 0 40 80 120 160 REVERSE VOLTAGE V (V) R 200 400 350 300 250 200 150 100 50 0 ...