LOW LEAKAGE DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD1504A LOW LEAKAGE DIODE
FEATUR...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD1504A LOW LEAKAGE DIODE
FEATURES Low Leakage High Conductance
MARKING: A14
A14
SOT-23
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Continuous Forward Current
IFM Peak Forward Current IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms
PD Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value 200 200 700 2.0 350 357 150 -55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current
Forward voltage
Total capacitance
Symbol V(BR) IR
VF
Ctot
Test conditions IR=5μA VR=180V IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0V,f=1MHz
Min 200
Unit V mA mA A
mW ℃/W
℃ ℃
Typ Max
10 0.75 0.85 0.95 1.1 1.3 1.5
4
Unit V nA
V
pF
www.cj-elec.com
1
B,Nov,2014
Typical Characteristics
Forward Characteristics
200
100
T =100℃ a
T =25℃ a
10
FORWARD CURRENT I (mA) F
CAPACITANCE BETWEEN TERMINALS C (pF)
T
1 0.4
2.0
1.5
0.6 0.8 1.0
FORWARD VOLTAGE V (V) F
1.2
Capacitance Characteristics
T =25℃ a
f=1MHz
1.0
0.5
0.0 0
5 10 15 20
REVERSE VOLTAGE V (V) R
POWER DISSIPATION P (mW) D
REVERSE CURRENT I (nA) R
Reverse Characteristics
100
T =100℃ a
10
1
T =25℃ a
0.1
0.01 0
40 80 120 160
REVERSE VOLTAGE V (V) R
200
400 350 300 250 200 150 100
50 0 0
Power Derating Curve
25 50 75 100 125
AMBIENT TEMPERA...
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