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MMBD4148ST

JCET

SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode MMBD4148AT/CT/ST SWITCHING DIODE ...


JCET

MMBD4148ST

File Download Download MMBD4148ST Datasheet


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode MMBD4148AT/CT/ST SWITCHING DIODE FEATURES z Small Surface Mounting Type z For General Purpose Switching Applications z Fast Switching Speed z High Conductance MMBD4148AT MMBD4148CT MMBD4148ST SOT-523 MARKING: KA3 MARKING: KA4 KA3 KA4 MARKING:KA5 KA5 KA5 Solid dot = Green molding compound device, if none, the normal device MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value VRM No-Repetitive Peak Reverse Voltage 100 VRWM Working Peak Reverse Voltage 75 VR(RMS) RMS Reverse Voltage 53 IO Continuous Forward Current 150 IFSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 2 PD Power Dissipation 150 RθJA Thermal Resistance from Junction to Ambient 833 Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse voltage V(BR) IR=10uA 75 Reverse current VR=75V IR VR=20V IF=1mA Forward voltage IF=10mA VF IF=50mA IF=150mA Total capacitance Ctot VR=0,f=1MHz Reverse recovery time trr IF= IR=10mA, Irr=0.1×IR,RL=100Ω www.cj-elec.com 1 Unit V V V mA A mW ℃/W ℃ ℃ Typ Max 1 25 0.715 0.855 1 1.25 2 4 Unit V µA nA V V V V pF ns B,Nov,2014 REVERSE CURRENT I (nA) R FORWARD CURRENT I (mA) F T a =100℃ Typical Characteristics Forward Characteristics 200 100 10 1 T a =25℃ 10000 1000 100 10 Reverse Characteristics T =100...




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