SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
MMBD4148AT/CT/ST SWITCHING DIODE
...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
MMBD4148AT/CT/ST SWITCHING DIODE
FEATURES z Small Surface Mounting Type z For General Purpose Switching Applications z Fast Switching Speed z High Conductance
MMBD4148AT
MMBD4148CT
MMBD4148ST
SOT-523
MARKING: KA3 MARKING: KA4
KA3 KA4
MARKING:KA5
KA5 KA5
Solid dot = Green molding compound device, if none, the normal device
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
VRM No-Repetitive Peak Reverse Voltage
100
VRWM
Working Peak Reverse Voltage
75
VR(RMS)
RMS Reverse Voltage
53
IO Continuous Forward Current
150
IFSM Non-repetitive Peak Forward Surge Current @ t=8.3ms
2
PD Power Dissipation
150
RθJA
Thermal Resistance from Junction to Ambient
833
Tj Junction Temperature
150
Tstg Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
V(BR)
IR=10uA
75
Reverse current
VR=75V IR
VR=20V
IF=1mA
Forward voltage
IF=10mA VF
IF=50mA
IF=150mA
Total capacitance
Ctot VR=0,f=1MHz
Reverse recovery time
trr IF= IR=10mA, Irr=0.1×IR,RL=100Ω
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1
Unit V V V mA A
mW ℃/W
℃ ℃
Typ Max
1 25 0.715 0.855 1 1.25 2 4
Unit V µA nA V V V V pF ns
B,Nov,2014
REVERSE CURRENT I (nA) R
FORWARD CURRENT I (mA) F
T a
=100℃
Typical Characteristics
Forward Characteristics
200 100
10
1
T a
=25℃
10000 1000 100 10
Reverse Characteristics
T =100...
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