BAS16T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148T:KA2 BAS16T:A2 1 3 2 KA2 A 2 Solid dot = Green molding compound device, if none,the normal device. KA2 A2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage VRM VRRM VRWM VR VR(RMS) 100 75 53 V V V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 200 mW Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature RθJA Tj TSTG 625 150 -55~+150 ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol V (BR) VF1 VF2 VF3 VF4 IR1 IR2 CT trr Min 75 Typ Max Unit V 0.715 V 0.855 V 1.0 V 1.25 V 1 μA 25 nA 2 pF 4 ns Conditions IR=1μA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω www.cj-elec.com 1 B,Oct,2014 REVERSE CURRENT I (nA) R FORWARD CURRENT I (mA) F T a Typical Characteristics Forward Characteristics 150 100 10 1 =100℃ T a =25℃...