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MMBD4448HADW

JCET

SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes MMBD4448HAQW/HADW/HCDW/HSDW/HTW S...


JCET

MMBD4448HADW

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes MMBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance Power Dissipation SOT-363 MMBD4448HA4W MMBD4448HADW MMBD4448HCDW MMBD4448HSDW MMBD4448HTW MARKING:KA5 KA5 KA5 MARKING:KA6 +-- +-- KA6 KA6 --+ --+ MARKING:KA7 -++ -++ KA7 KA7 ++- ++- MARKING:KAB -+ -+ KAB KAB +- +- MARKING: KAA --- --- KAA KAA +++ +++ Solid dot = Pin1 indicate. Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage VRM 100 Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 80 DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 57 Forward Continuous Current IFM 500 Average Rectified Output Current IO 250 Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 Power Dissipation Thermal Resistance from Junction to Ambient Storage Temperature Pd RθJA TSTG 200 625 -55 ~+150 Unit V V V mA mA A mW ℃ /W ℃ www.cj-elec.com 1 D,Mar,2016 ELECTRICAL CHARACTERISTICS Electrical Ratings @Ta=25℃ Parameter Reverse Breakdown Voltage Forward Voltage Reverse Current Capacitance Between Terminals Symbol Min Typ Max Unit V (BR) 80 V VF1 0.62 0.72 V VF2 0.855 V VF3 1.0 V VF4 1.25 V IR1 100 nA IR2 2...




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