SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
MMBD4448HAQW/HADW/HCDW/HSDW/HTW
S...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
MMBD4448HAQW/HADW/HCDW/HSDW/HTW
Switching Diode
FEATURES
z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications
z High Conductance Power Dissipation
SOT-363
MMBD4448HA4W MMBD4448HADW MMBD4448HCDW MMBD4448HSDW MMBD4448HTW
MARKING:KA5
KA5 KA5
MARKING:KA6
+-- +--
KA6 KA6
--+ --+
MARKING:KA7
-++ -++
KA7 KA7
++- ++-
MARKING:KAB
-+
-+
KAB KAB
+-
+-
MARKING: KAA
--- ---
KAA KAA
+++ +++
Solid dot = Pin1 indicate. Solid dot = Green molding compound device, if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
Parameter
Symbol
Limit
Non-Repetitive Peak Reverse Voltage
VRM 100
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
80
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
57
Forward Continuous Current
IFM 500
Average Rectified Output Current
IO 250
Non-Repetitive Peak Forward Surge Current @t=8.3ms
IFSM
2.0
Power Dissipation Thermal Resistance from Junction to Ambient Storage Temperature
Pd RθJA
TSTG
200 625 -55 ~+150
Unit V
V
V mA mA A mW ℃ /W ℃
www.cj-elec.com
1
D,Mar,2016
ELECTRICAL CHARACTERISTICS
Electrical Ratings @Ta=25℃
Parameter Reverse Breakdown Voltage
Forward Voltage
Reverse Current Capacitance Between Terminals
Symbol Min Typ Max Unit
V (BR)
80
V
VF1 0.62
0.72 V
VF2 0.855 V
VF3 1.0 V
VF4 1.25 V
IR1 100 nA
IR2 2...
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