MMBD914

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD914 SWITCHING DIODE FEATURES High-Speed Switching Diode MARKING: 5D 5D 5D SOT-23 1 3 2 Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t@=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Symbol VRM VRRM VRWM VR IO IFSM PD RθJA Tj TSTG Electrical Characteristics@Ta=25℃ Parameter Reverse Breakdown Voltage Forward Voltage Reverse Current Diode Capacitance Symbol V (BR) VF1 VF2 VF3 VF4 IR1 IR2 CD Min 100 Reverse Recovery Time trr Limit 100 100 300 2 350 357 150 -55~+150 Unit V V mA A mW ℃/W ℃ ℃ Typ Max Unit Conditions V IR=100μA 715 mV IF=1mA 855 mV IF=10mA 1000 mV IF=50mA 1250 1 mV IF=150mA uA VR=75V 25 nA VR=20V 2 pF VR=0,f=1MHz 4 ns IF =IR=10mA, Irr=0.1*IR www.cj-elec.com 1 B,Nov,2014 Typical Characteristics FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (nA) R Forward Characteristics 300 1000 100 300 30 100 10 30 3 10 1 3 0.3 0.1 0.0 0.4 0.8 1.2 FORWARD VOLTAGE V (V) F 1.6 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE V (V) R 80 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Charac...