DatasheetsPDF.com

BAS16V

JCET

SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Diodes BAS16V SWITCHING DIODE FEATURES z...



BAS16V

JCET


Octopart Stock #: O-1025093

Findchips Stock #: 1025093-F

Web ViewView BAS16V Datasheet

File DownloadDownload BAS16V PDF File







Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Diodes BAS16V SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: KAM SOT-563 6 51 4 KAM KAM Solid dot = Pin1 indicate. Solid dot = Green molding compound device, if none,the normal device. 1 23 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RθJA Tj TSTG 100 75 53 300 200 2.0 150 833 150 -55~+150 V V V mA mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min Typ Max Unit V (BR) 75 V VF1 0.715 V VF2 0.855 V VF3 1.0 V VF4 1.25 V IR1 1 μA IR2 25 nA CT 2 pF trr 4 ns Conditions IR=100 μA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω www.cj-elec.com 1 B,Oct,2014 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Typical Characteristics 300 Pulsed Forward Characteristics 100 =25℃ =100℃ T a...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)