SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS21/A/C/S SWITCHING DIODE
FEATUR...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS21/A/C/S SWITCHING DIODE
FEATURES
z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance
BAS21
BAS21A
BAS21C
BAS21S
SOT-23
MARKING: JS
JS
MARKING:JS2 MARKING:JS3
JS2 JS3
MARKING:JS4
JS4
JS JS2
JS3
JS4
Solid dot = Green molding compound device, if none, the normal device
Maximum Ratings @Ta=25℃
Parameter
Repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current Average rectified output current Non-Repetitive Peak Forward Surge Current @t=8.3ms Repetitive peak forward surge current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature range
Symbol
VRRM VRWM
VR IFM IO IFSM IFRM PD RθJA TJ TSTG
Limit
250
400 200 2.5 625 225 555 150 -55~+150
Unit
V
mA mA A mA mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current
Forward voltage
Diode capacitance Reveres recovery time
Symbol
Test conditions
Min Max Unit
V(BR)
IR= 100µA
250 V
IR VR=200V
0.1 µA
VF
IF=100mA IF=200mA
CD VR=0V, f=1MHz
1000 1250
5
mV
pF
trr IF=IR=30mA,Irr=0.1×IR,RL=100Ω
50 ns
www.cj-elec.com
1
D,Nov,2015
Typical Characteristics
Forward Characteristics
1000
oC
=100
oC
T a
=25
T a
FORWARD CURRENT IF (mA)
100
10
1
0.1...
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