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BAS316

JCET

SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAS316 SWITCHING DIODE SOD-323 ...


JCET

BAS316

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAS316 SWITCHING DIODE SOD-323 FEATURES  Very Small Plastic Package  High Switching Speed APPLICATIONS  High-Speed Switching in e.g. Surface Mounted Circuits MARKING: A6· A6 A6 The marking bar indicates the cathode Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak Repetitive Reverse Voltage VR DC Blocking Voltage IO Continuous Forward Current IFSM Non-repetitive Peak Forward Surge Current@t= 8 . 3 m s PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature Value 85 75 250 2.0 250 500 150 -55~+150 Unit V mA A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse voltage V(BR) IR=100μA Reverse current IR VR=25V VR=75V IF=1mA Forward voltage VF IF=10mA IF=50mA IF=150mA Total capacitance Ctot VR=0V,f=1MHz Reverse recovery time trr IF= IR=10mA, Irr=0.1×IR Min Typ Max 100 Unit V 30 nA 1 μA 0.715 0.855 1 V 1.25 1.5 pF 4 ns www.cj-elec.com 1 D,Mar,2015 Typical Characteristics Forward Characteristics 250 100 =100℃ =25℃ T a FORWARD CURRENT I (mA) F 10 T a 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE V (V) F 1.2 REVERSE CURRENT I (nA) R 10000 1000 100 10 1 0 Reverse Characteristics T =100℃ a T =25℃ a 20 40 60 REVE...




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