SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAV23A/C/S
SWITCHING DIODE
FEATU...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAV23A/C/S
SWITCHING DIODE
FEATURES z Fast Switching Speed z High Conductance z For General Purpose Switching Applications
BAV23A
BAV23C
BAV23S
SOT-23
MARKING: KT7 MARKING: KT6 MARKING:KL31
KT7
KT7
KT6
KT6
KL31
KL31
Solid dot = Green molding compound device, if none, the normal device
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM VRWM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage
VR(RMS) IO IFSM
RMS Reverse Voltage Average Rectified Output Current Non-repetitive Peak Forward Surge Current @ t= 8.3ms
PD RΘJA
Tj Tstg
Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value
250
175 225 1.7 350 357 150 -55~+150
Unit
V
V mA A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage Reverse current
V(BR) IR
IR=100μA VR=250V
Forward voltage
IF=100mA VF
IF=200mA
Total capacitance Reverse recovery time
Ctot VR=0V,f=1MHz trr IF= IR=30mA, Irr=0.1×IR, RL=100Ω
Min Typ Max 250
0.1 1
1.25 5 50
Unit V μA
V
pF ns
www.cj-elec.com
1
D,Jun,2014
Typical Characteristics
Forward Characteristics
300 Pulsed
100
=100℃
=25℃
T a
FORWARD CURRENT I (mA) F
10
1
T a
0.1
CAPACITANCE BETWEEN TERMINALS C (pF)
T
0.01 0.2
0.4 0.6 0.8 1.0
FORWARD VOLTAGE V (V) F
1.2
Capacitance Characteristics
1.6 T =25℃
a
f=1MHz
1.4
1.2
...
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