NT5DS16M16ES

DDR 256Mb SDRAM Confidential NT5DS32M8ES / NT5DS16M16ES Nanya Technology Corp. NT5DS32M8ES / NT5DS16M16ES Commercial and Industrial Consumer DDR 256Mb SDRAM Features  JEDEC DDR Compliant - Differential clock inputs (CK and ) - DLL aligns DQ and DQS transition with CK transitions - 2n Prefetch Architecture - DQS is edge-aligned with data for reads and center-aligned with data for WRITEs - DQ and DM referenced to both edges of DQS - tRAS lockout (tRAP = tRCD)  Signal Integrity - Configurable DS for system compatibility  Data Integrity - Auto Refresh Mode - Self Refresh Mode  Power Saving Mode - Power Down Mode  Interface and Power Supply - SSTL_2 compatible (All inputs) - SSTL_2, Class II compatible (All outputs) - VDD/VDDQ=2.5V±0.2V (DDR-333) - VDD/VDDQ=2.6V±0.1V (DDR-400)  Speed Grade (CL-TRCD-TRP) 1,2 - 400 Mbps / 3-3-3 Options  Temperature Range (TA) - Commercial Grade = 0℃~70℃ - Industrial Grade = -40℃~85℃  CAS Latency (2.5, 3, 4)  Burst Length (2, 4, 8) Programmable Functions  Burst Type (Sequential, Interleaved)  Driver Strength (Normal, Weak) Packages / Density Information Lead-free RoHS compliance and Halogen-free 256Mb (Org. / Package) Length x Width5 (mm) Pin pitch (mm) 32M x 8 66 pin TSOPII 16M x 16 22.22 x 10.16 0.65 Density and Addressing Item Organization Number of banks Bank Address Auto precharge tRFC(ns) 3 tREFI (µs) 4 Row Address Column Address 256Mb 32M x 8 4 BA0,BA1 A10/AP 72 7.8 A0-A12 A0-A9 16M x 16 4 BA0,BA1 A10/AP 72...