IRF7105TRPBF-1

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) N-CH 25 0.1 9.4 3.5 P-CH -25 0.25 10 -2.3 V Ω nC A IRF7105TRPbF-1 HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7105PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7105TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. N-Channel P-Channel 3.5 -2.3 2.8 -1.8 14 -10 2.0 0.016 ± 20 3.0 -3.0 -55 to + 150 Units A W W/°C V V/nS °C Thermal Resistance Ratings RθJA Parameter Maximum Junction-to-Ambient „ Min. ––– Typ. ––– Max. 62.5 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7105TRPbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp....