CMPSH-3

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE CMPSH-3 FEATURES * Power dissipation PD: 350 mW (Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse Breakdown Voltage (IR=100mA) Reverse voltage leakage current (VR=25V) Reverse voltage leakage current (VR=25V, TA= 100oC) Forward voltage (IF=2mA) Forward voltage (IF=15mA) Forward voltage (IF=100mA) SYMBOL V(BR) IR VF Diode capacitance (VR=0V, f=1MHz) Reverse recovery time (IF=IR=10mA, IRR=1.0mA, RL=100W) Ctot trr Marking Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)". SOT-23 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) 0.019(2.00) 1 0.071(1.80) 0.118(3.00) 3 0.110(2.80) 2 Dimensions in inches and (millimeters) MIN TYP 30 -------- D95 MAX - 500 100 0.33 0.45 1 8 5 UNITS V nA mA V V V pF ns 2006-3 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to an...