DS160-40THD02

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02L Plastic-Encapsulate Diodes DS160-40THD02 SCHOTTKY BARRIER DIODE FEATURES z Low forward voltage drop z Small power mold type z Low IR z Small current rectification APPLICATIONS z Low voltage rectification z High efficiency DC-to-DC conversion z Switch mode power supply z LED backlight for mobile application z Low power consumption applications z Ultra high-speed switching z Reverse polarity protection MARKING: AD WBFBP-02L (1.6×0.8×0.5) unit:mm MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage Value 40 Unit V VR(RMS) IO IFSM PD RΘJA Tj Tstg RMS Reverse Voltage Average Rectified Output Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 28 1 5 150 667 125 -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Symbol V(BR) IR VF IR=10μA VR=40V IF=0.7A Test conditions Min 40 Diode capacitance VR=1V; f=1MHz; Tj=25°C Cd VR=10V; f=1MHz; Tj=25°C Reverse recovery time trr IF=IR=10mA; RL=100Ω; IR(meas)=1mA V A A mW ℃/W ℃ ℃ Typ Max 50 0.55 50 20 15 Unit V μA V pF pF ns www.cj-elec.com 1 F,Nov,2015 Typical Characteristics Forward Characteristics 2 1 Ta=125℃ Ta=75℃ FORWARD CURRENT IF (A) 0.1 Ta=25℃ 0.01 0 200 400 600 800 ...