JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02L Plastic-Encapsulate Diodes
DS161-40THD02 SCHOTTKY BARRIER ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02L Plastic-Encapsulate Diodes
DS161-40THD02
SCHOTTKY BARRIER DIODE
WBFBP-02L
FEATURES z Low forward voltage drop z Small power mold type z Low IR z Small current rectification
APPLICATIONS z Low voltage rectification z High efficiency DC-to-DC conversion z Switch mode power supply z LED backlight for mobile application z Low power consumption applications
z Reverse polarity protection
MARKING:
BD
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM VRWM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage
VR(RMS) IO IFSM PD
RΘJA Tj Tstg
RMS Reverse Voltage Average Rectified Output Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value
40
28 1.5 8 150 667 125 -55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage Reverse current
V(BR) IR
IR=250μA VR=20V VR=40V
IF=0.5A
Forward voltage
VF IF=1.0A
IF=1.5A
Diode capacitance
Cd VR=0V; f=1MHz;
Min 40
Unit
V
V A A mW ℃/W ℃ ℃
Typ Max
40 50 0.40 0.45 0.58 180
Unit V μA μA V
V
V pF
www.cj-elec.com
1
A-1,Mar,2016
Typical Characteristics
3000 1000
Pulsed
Forward Characteristics
=100℃
T a
=25℃
FORWARD CURRENT I (mA) F
100
10
T a
1
0.1 0.0
0.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE V (V) F
0.6
REVERSE CURRENT I (uA) R
10000
Pulsed
1000
Re...
