JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02C Plastic-Encap sulate Diodes
DS520-40LED02 Schottky Barrier...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02C Plastic-Encap sulate Diodes
DS520-40LED02
Schottky Barrier Diode
FEATURES z Small surface mounting type z Low IR z High reliability
MARKING: D1
WBFBP-02C
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Symbol
Limit
DC reverse voltage Mean rectifying current Non-repetitive peak forward surge current@t=8.3ms Power Dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
VR IO IFSM PD RθJA TJ TSTG
40 0.2 1 100 1000 125 -55~+150
Unit V A A
mW ℃/W
℃
Electrical Ratings @TA=25℃
Parameter Forward voltage Reverse current
Symbol Min Typ Max Unit
VF
0.39 0.55
V
IR
1 10
μA
Conditions
IF=10mA IF=100mA VR=10V VR=40V
www.cj-elec.com
1
A-2,Mar,2015
Typical Characteristics
Forward Characteristics
100
FORWARD CURRENT I (mA) F Ta=100 oC Ta=25 oC
10
1
0.1
0.01 0.0
0.2 0.4
FORWARD VOLTAGE V (V) F
0.6
REVERSE CURRENT I (uA) R
Reverse Characteristics
100
Ta=100 oC
10
Ta=25 oC
1
0.1 0
10 20 30 40
REVERSE VOLTAGE V (V) R
CAPACITANCE BETWEEN TERMINALS C (pF)
T
Capacitance Characteristics
20
Ta=25℃ f=1MHz
15
10
5
0 0 5 10 15 20
REVERSE VOLTAGE V (V) R
POWER DISSIPATION P (mW) D
Power Derating Curve
150
100
50
0 0 25 50 75 100 125
AMBIENT TEMPERATURE T (℃) a
www.cj-elec.com
2
A-2,Mar,2015
WBFBP-02C 3DFNDJH 2XWOLQH 'LPHQVLRQV
Symbol
A
A1 D E D1 E1 b b1 e e1 L L1 L2 L3
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.010 0.95...
