DSS40LED02

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DSS40LED02 Schottky Barrier Diode DESCRIPTION WBFBP-02C Planar Schottky barrier diode with an integrated guard ring for stress protection. FEATURES z Low diode capacitance z Low forward voltage z Guard ring protected APPLICATION z Ultra high-speed switching z Voltage clamping z Protection circuits z Mobile communication ,digital (still) cameras , PDAs and PCMCIA cards MARKING: S6 _ + Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits DC reverse voltage Continuous forward current Non-repetitive peak forward surge current@t=8.3ms Junction temperature Storage temperature VR IF IFSM TJ Tstg 40 120 200 125 -65~+150 Electrical Ratings @TA=25℃ Parameter Symbol Min Typ Max Unit Continuous forward voltage VF 0.38 0.5 V 1 Continuous reverse current (note 1) Diode capacitance Note: 1. pulse test: tp=300μs; δ=0.02 www.cj-elec.com IR Cd 1 μA 10 5 pF 1 Unit V mA mA ℃ ℃ Conditions IF=1mA IF =10mA IF =40mA VR=30V VR=40V VR=0V, f=1MHz D,Mar,2015 Typical Characteristics FORWARD CURRENT IF (mA) 200 Pulsed 100 Forward Characteristics Ta=100℃ 10 1 Ta=25℃ 0.1 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 1.0 Capacitance Characteristics 4.0 Ta=25℃ f=1MHz 3.5 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 25 REVERSE VOLTAGE VR (V) 30 POWER DISSIPATION PD (W) REVERSE CURRENT IR (uA) 100 Pulsed 10 Reverse Characteristics Ta=100℃ 1 0.1 0.01 Ta=25...