DS521-30EAA02

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB0.6x0.3-2L-B Plastic-Encapsulate Diodes DS521-30EAA02 SCHOTTKY BARRIER DIODE DFNWB0.6x0.3-2L-B FEATURE  Small surface mounting type  Low reverse current and low forward voltage  High reliability APPLICATION  High speed switching for detection  For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,  DVD-ROM, Note book PC, etc.) MARKING BACKSIDE  + ‐  FRONTSIDE  F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VRRM VRWM VR(RMS) Repetitive Peak Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage IO Average Rectified Output Current IFSM Non-Repetitive Peak Forward Surge Current@ t=8.3ms Pd Power Dissipation RθJA TJ Tstg Thermal Resistance from Junction to Ambient Junction temperature Storage Temperature Limit 30 21 100 0.5 100 1000 125 -55 ~ +150 Unit V V mA A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Parameter Symbol Test Condition Reverse breakdown voltage V(BR) IR=50μA Reverse current VR=10V IR VR=30V Forward voltage IF=10mA VF IF=100mA Min Typ Max 30 10 50 0.38 0.60 Unit V μA μA V V www.cj-elec.com 1 B,Apr,2016 7\SLFDO&KDUDFWHULVWLFV 200 100 Pulsed Forward Characteristics oC =100 T a oC FORWARD CURRENT I (mA) F 10 1 =25 T a 0.1 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE V (V) F REVERSE CURRENT I (uA) R 1000 Pulsed 100 Reverse Characteristics T =100 oC a 10 1 0.1 T =25 oC a 0.01 1E-3...