1SS372

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS372 SCHOTTKY BARRIER DIODE FEATURES  Small Package  Low Forward Voltage APPLICATIONS  High Speed Switching MARKING: N9 SOT-323 N9 N9 Solid dot = Green molding compound device,if none,the normal device MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VR DC Blocking Voltage IO Forward Continuous Current IFM Peak Forward Current IFSM Non-respetitive Peak Forward Surge Current@t=8.3ms PD Power Dissipation RθJA Thermal Resistance From Junction To Ambient Tj Junction Temperature Tstg Storage Temperature Value 10 100 200 1 100 1000 125 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Symbol V(BR) IR VF Ctot Test conditions IR=100μA VR=10V IF=1mA IF=5mA IF=100mA VR=0V,f=1MHz Min Typ Max 10 20 0.18 0.3 0.5 40 Unit V μA V pF www.cj-elec.com 1 C,Oct,2015 Typical Characteristics 100 Pulsed Forward Characteristics 10 T a =100℃ FORWARD CURRENT I (mA) F =25℃ T a 1 0 100 100 200 300 400 FORWARD VOLTAGE V (mV) F 500 Capacitance Characteristics T =25℃ a f=1MHz 10 1 0 5 10 15 20 REVERSE VOLTAGE V (V) R REVERSE CURRENT I (uA) R 1000 Pulsed 100 Reverse Characteristics T =100℃ a 10 1 T =25℃ a 0.1 0.01 0 120 100 80 60 40 20 0 0 2468 REVERSE VOLTAGE V (V) R Power Derating Curve 10 25 50 75 100 AMBIENT TEMPERATURE T (...