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1SS388

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SCHOTTKY BARRIER DIODE FEA...


JCET

1SS388

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low forward voltage z Low reverse current SOD-523 MARKING: S3 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Peak reverse voltage VRM 45 DC reverse voltage VR 40 Maximum (peak) forward current IFM 300 Average forward current Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation IO IFSM PD 100 1000 150 Junction temperature Tj 125 Storage temperature Tstg -55~+150 Unit V V mA mA mA mW ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Total capacitance www.cj-elec.com Symbol Min Typ Max Unit VF1 0.28 V VF2 0.36 V VF3 0.54 0.60 V IR 5 μA CT 18 25 pF 1 Conditions IF=1mA IF=10mA IF=50mA VR=10V VR=0,f=1MHZ E,Mar,2015 Typical Characteristics FORWARD CURRENT IF (mA) Forward Characteristics 300 100 ℃ 10 =25℃ =100 T a T a 1 0.1 0 100 200 300 400 FORWARD VOLTAGE VF (mV) 500 600 Capacitance Characteristics 20 Ta=25℃ f=1MHz 15 10 5 0 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (uA) Reverse Characteristics 100 Ta=100 ℃ 10 1 Ta=25 ℃ 0.1 0.01 0 175 150 125 100 75 50 25 0 0 10 20 30 REVERSE VOLTAGE VR (V) Power Derating Curve 40 25 50 75 AMBIENT TEMPERATURE Ta (℃) 100 125 CAPACITANC...




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