JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS388 SCHOTTKY BARRIER DIODE
FEA...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS388
SCHOTTKY BARRIER DIODE
FEATURES z Small pacakage z Low forward voltage z Low reverse current
SOD-523
MARKING: S3
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
Parameter
Symbol
Limit
Peak reverse voltage
VRM
45
DC reverse voltage
VR
40
Maximum (peak) forward current
IFM
300
Average forward current Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation
IO IFSM PD
100 1000
150
Junction temperature
Tj
125
Storage temperature
Tstg
-55~+150
Unit V V mA mA mA mW ℃ ℃
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current Total capacitance www.cj-elec.com
Symbol Min
Typ Max Unit
VF1 0.28 V
VF2 0.36 V
VF3
0.54 0.60
V
IR 5 μA
CT 18 25 pF
1
Conditions IF=1mA IF=10mA IF=50mA VR=10V VR=0,f=1MHZ
E,Mar,2015
Typical Characteristics
FORWARD CURRENT IF (mA)
Forward Characteristics
300
100
℃
10
=25℃
=100
T a
T a
1
0.1 0
100 200 300 400
FORWARD VOLTAGE VF (mV)
500
600
Capacitance Characteristics
20
Ta=25℃ f=1MHz
15
10
5
0 0 5 10 15 20 25 30
REVERSE VOLTAGE VR (V)
REVERSE CURRENT IR (uA)
Reverse Characteristics
100
Ta=100 ℃
10
1
Ta=25 ℃
0.1
0.01 0
175 150 125 100
75 50 25
0 0
10 20 30
REVERSE VOLTAGE VR (V)
Power Derating Curve
40
25 50 75
AMBIENT TEMPERATURE Ta (℃)
100
125
CAPACITANC...