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B0520WS

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B0520WS/B0530WS/B0540WS SCHOTTKY ...


JCET

B0520WS

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B0520WS/B0530WS/B0540WS SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version MARKING: B0520WS:SD B0530WS:SE B0540WS:SF SOD-323 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25℃ Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage reverse voltage (DC) Average rectified output current @Not=n8-r.3empestitive Peak Forward Surge Current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature Voltage rate of change Symbol VRRM VRWM VR VR(RMS) Io IFSM PD RθJA Tj TSTG dv/dt B0520WS 20 14 B0530WS 30 21 0.5 5.5 200 500 125 -55~+150 1000 B0540WS Unit 40 V 28 V A A mW ℃/W ℃ ℃ V/μs Electrical Characteristics @Ta=25℃ Parameter Sy mbol Minimum reverse breakdown voltage V(BR) Forward voltage Reverse current Reverse current Capacitance between terminals www.cj-elec.com VF1 VF2 VF3 IR1 IR2 IR3 IR4 IR5 CT B0520WS 20 --- 0.33 0.39 -75 -250 --170 B0530WS -30 -- 0.36 0.45 --80 100 500 -170 1 B0540WS --40 -- 0.510 0.62 --10 -20 170 Unit V V μA μA pF Conditions IR=250μA IR=500μA IR=20μA IF=0.1A IF=0.5A IF=1A VR=10V VR=15V VR=20V VR=30V VR=40V VR=0,f=1MHz F,Mar,2015 Typical Characteristics 10 Forwar...




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