JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B16WS Schottky Barrier Diode
FEA ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B16WS
Schottky Barrier Diode
FEA TURES z Guard ring protection z Low forward voltage drop z For use in low voltage, high frequency inverters z High surge current capability
SOD-323
Marking: SM
MAXIMUM RATINGS( Ta=25℃ unless otherwise noted )
Symbol VRRM VRMS VDC IF IFSM Ptot RθJA TJ Tstg
Parameter Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Continuous forward current Non-repetitive Peak forward surge current@t=8.3ms Total power dissipation Thermal resistance junction to ambient air Junction temperature
storage temperature
Value 60 42 60 1 10 250
400 125 -55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Unit
V
A mW ℃/W ℃ ℃
Parameter Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage
Total capacitance
Symbol
Test conditions
VF IF=1A
IR VR=60V
Ctot VR=4V,f=1MHz
Min Typ Max Unit 0.7 V
0.1 mA
120 pF
www.cj-elec.com
1
E,Mar,2015
Typical Characteristics
Forward Characteristics
1000
FORWARD CURRENT IF (mA)
100
10
=25℃
=100℃
T
a
T a
1
0.1 0
100 200 300 400 500
FORWARD VOLTAGE VF (mV)
600 650
REVERSE CURRENT IR (uA)
Reverse Characteristics
10000
1000 100
Ta=100℃
10
Ta=25℃
1
0.1 0.1
5
10 15 20 25 30 35 40 45 50 55 60
REVERSE VOLTAGE VR (V)
CAPACITANCE BETWEEN TERMINALS CT (pF)
POWER DISSIPATION PD (mW)
Capacitance Characteristics
150
Ta=25℃ f=1MHz
100
50
0...
