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B2020WS

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B2020WS SCHOTTKY BARRIER DIODE FE...


JCET

B2020WS

File Download Download B2020WS Datasheet


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B2020WS SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Very Small SMD Package APPLICATIONS z Low Voltage Rectification z High Efficiency DC/DC Conversion z Switch Mode Power Supply z Inverse Polarity Protection z Low Power Consumption Applications MARKING: SH SOD-323 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak Repetitive Reverse Voltage VRWM VR(RMS) IF IFSM PD Working Peak Reverse Voltage RMS Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation Note1 Note2 RΘJA Thermal Resistance from Junction to Ambient Note1 Note2 Tj Junction Temperature Tstg Storage Temperature 1:Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2.Device mounted on an FR4 PCB with copper pad 10 x 10 mm. Value 20 14 2 9 250 480 400 208 125 -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse current Symbol V(BR) IR Forward voltage Total capacitance *Pulse test: tp ≤ 300 μs; δ ≤ 0.02. VF* Ctot Test conditions IR=1mA VR=10V VR=20V IF=1A IF=2A VR=4V,f=1MHz Min Typ 20 www.cj-elec.com 1 Unit V V A A mW ℃/W ℃ ℃ Max Unit V 80 μA 100 0.45 V 0.55 120 pF D,Mar,2015 Typical Characteristics Forw...




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