N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
4N60
1.Description
The KIA4N60 is a high voltage MOSFET and is designed to h...
Description
KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
4N60
1.Description
The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
2. Features
600V, RDS(ON) =2.1Ω@ VGS=10V Ultra low gate charge (typ Qg=15.5nC) Low Reverse capacitance (typ Crss=8pF) 100% avalanche tested RoHS compliant
3. Pin configuration
Pin Function 1 Gate 2 Drain 3 Source
1 of 7
KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
4N60
4. Absolute maximum ratings
Parameter
Drain-source voltage
Drain current
Tc=25 ºC Tc=100 ºC
Drain current pulsed (note 1)
Gate current voltage
Single pulsed avalanche energy (note 2)
Avalanche current (note 1)
Repetitive avalanche energy (note 1)
Peak diode recovery dv/dt (note 3)
Power dissipation
Tc=25 ºC derate above 25 ºC
Operating and Storage temperature range
Maximum lead temperature for soldering purposes,1/8’’ from case for 5 seconds
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
(TC= 25 ºC , unless otherwise specified)
Rating 600 4 2.5 16 ±30 260 4.4 10.6 4.5 75 0.59
-55 ~ +150
300
Units V A A A V mJ A mJ
V/ns W
W/ºC ºC
ºC
5. Thermal characteristics
Parameter Thermal resistance,Junction-to-case Thermal resistance,Junction-to-ambient
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