4N60

KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 4N60 1.Description The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 2. Features „ 600V, RDS(ON) =2.1Ω@ VGS=10V „ Ultra low gate charge (typ Qg=15.5nC) „ Low Reverse capacitance (typ Crss=8pF) „ 100% avalanche tested „ RoHS compliant 3. Pin configuration Pin Function 1 Gate 2 Drain 3 Source 1 of 7 KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 4N60 4. Absolute maximum ratings Parameter Drain-source voltage Drain current Tc=25 ºC Tc=100 ºC Drain current pulsed (note 1) Gate current voltage Single pulsed avalanche energy (note 2) Avalanche current (note 1) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Power dissipation Tc=25 ºC derate above 25 ºC Operating and Storage temperature range Maximum lead temperature for soldering purposes,1/8’’ from case for 5 seconds Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ , TSTG TL (TC= 25 ºC , unless otherwise specified) Rating 600 4 2.5 16 ±30 260 4.4 10.6 4.5 75 0.59 -55 ~ +150 300 Units V A A A V mJ A mJ V/ns W W/ºC ºC ºC 5. Thermal characteristics Parameter Thermal resistance,Junction-to-case Thermal resistance,Junction-to-ambient ...