4N60H

KIA SEMICONDUCTORS 4.0A 600V N-CHANNEL MOSFET 4N60H 1.Description The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features  RDS(ON) =2.3Ω@ VGS=10V  Low gate charge (typical 13.5nC)  High ruggedness  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA SEMICONDUCTORS 4.0A 600V N-CHANNEL MOSFET 4N60H 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage VDSS VGSS Drain continuous current TC=25ºC TC=100ºC ID Drain current pulsed (note1) Avalanche energy Repetitive (note1) Single pulse (note2) Peak diode recovery dv/dt (note3) IDM EAR EAS dv/dt Total power dissipation TC=25ºC Derate above 25ºC PD Junction temperature TJ Storage temperature TSTG *Drain current limited by maximum junction temperature. (TC= 25ºC , unless otherwise specified) TO220 Rating TO220F TO251 TO252 Units 600 V ±30 V 4.0 4.0* 2.8 A 2.4 2.4* 1.8 A 16 16* 12 A 9.3 5.5 mJ 180 mJ 4.5 V/ns 93 31 55 W 0.74 0.24 0.44 W/ºC +150 ºC -55~+150 ºC 5. Thermal characteristics Parameter Thermal resistance,junction-ambient Thermal resistance,case-to-sink typ Thermal resistance junction-case Symbol RthJA RthJS RthJC Rating TO220 TO220F ...