Document
Main Product Characteristics
VDSS
40V
RDS(on) 2.87mohm(typ.)
ID 120A ① Features and Benefits
TO-220
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product
SSFT4004
40V N-Channel MOSFET
Marking and Pin Schematic Diagram Assignment
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range
Max. 120① 90① 480 190 1.27
40 ± 20 346 48 -55 to + 175
Units
A
W W/°C
V V mJ A °C
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Page 1 of 7
Rev.1.0
SSFT4004
40V N-Channel MOSFET
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 0.79 62 40
Units ℃/W ℃/W ℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
IDSS Drain-to-Source leakage current
IGSS Gate-to-Source forward leakage
Qg Total gate charge
Qgs Gate-to-Source charge
Qgd Gate-to-Drain("Miller") charge
td(on)
Turn-on delay time
tr Rise time
td(off)
Turn-Off delay time
tf Fall time
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
Min. 40 — — 1 — — — — -100 — — — — — — — — — —
Typ. — 2.87 5.33 — 1.0 — — — —
111.2 21.0 30.3 17.8 139.4 107.3 142.3 7081 496 479
Max. — 4 — 3 — 1 50 100 — — — — — — — — — — —
Units V mΩ V μA nA nC
ns
pF
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 30A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 40V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 80A, VDS=25V, VGS = 10V
VGS=10V, VDS =20V, RL=0.5Ω, RGEN=7Ω, ID = 80A
VGS = 0V, VDS = 25V, ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter
Min. Typ.
Max.
Continuous Source Current (Body Diode)
—
— 120 ①
Pulsed Source Current (Body Diode)
— — 480
Diode Forward Voltage
— 0.70
1.3
Reverse Recovery Time
— 19.2
—
Reverse Recovery Charge — 12.0
—
Units A
A V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.1A, VGS=0V TJ = 25°C, IF =75A, di/dt = 100A/μs
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Page 2 of 7
Rev.1.0
Test Circuits and Waveforms
SSFT4004
40V N-Channel MOSFET
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
②Repetitive rating; pulse width limited by max junction temperature. ③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.0
Typical Electrical and Thermal Characteristics
SSFT4004
40V N-Channel MOSFET
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
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Page 4 of 7
Rev.1.0
Typical Electrical and Thermal Characteristics
SSFT4004
40V N-Channel MOSFET
Figure 5. Maximum Drain Current Vs. Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
Mechanical Data
TO220 PACKAGE OUTLINE DIMENSION_GN E
SSFT4004
40V N-Channel MOSFET
A
D
D1 b
ФP ФP1
b1
ϴ1 ϴ2
L
D2 ϴ3 A1 ϴ4
Symbol
A A1 b b1 c D D1 D2 E E1 ФP ФP 1
e L ϴ1 ϴ2 ϴ3
ϴ4
e
Dimension In Millimeters
Min Nom Max
- 1.300
-
2.200
2.400
2.600
- 1.270
-
1.270
1.370
1.470
- 0.500
-
- 15.600
-
- 28.700
-
- 9.150
-
9.900
10.000
10.100
- 10.160
-
- 3.600
-
1.500
2.54BSC
12.900
13.100
13.300
- 70 -
- 70 - 30 -
- 30 -
c E1
Dimension In Inches
Min Nom Max
- 0.051
-
0.087
0.094
0.102
- 0.050
-
0.050
0.054
0.058
- 0.020
-
- 0.614
-
- 1.130
-
- 0.360
-
0.390
0..