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SSFT4004 Dataheets PDF



Part Number SSFT4004
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSFT4004 DatasheetSSFT4004 Datasheet (PDF)

Main Product Characteristics VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A ① Features and Benefits TO-220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSFT4004 40V N-Channel MOSFET Marking and Pin Schematic Diagram Assignment Description It utilizes the latest trench processing techn.

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Main Product Characteristics VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A ① Features and Benefits TO-220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSFT4004 40V N-Channel MOSFET Marking and Pin Schematic Diagram Assignment Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Max. 120① 90① 480 190 1.27 40 ± 20 346 48 -55 to + 175 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.1.0 SSFT4004 40V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 0.79 62 40 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time td(off) Turn-Off delay time tf Fall time Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Min. 40 — — 1 — — — — -100 — — — — — — — — — — Typ. — 2.87 5.33 — 1.0 — — — — 111.2 21.0 30.3 17.8 139.4 107.3 142.3 7081 496 479 Max. — 4 — 3 — 1 50 100 — — — — — — — — — — — Units V mΩ V μA nA nC ns pF Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 30A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 40V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 80A, VDS=25V, VGS = 10V VGS=10V, VDS =20V, RL=0.5Ω, RGEN=7Ω, ID = 80A VGS = 0V, VDS = 25V, ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Min. Typ. Max. Continuous Source Current (Body Diode) — — 120 ① Pulsed Source Current (Body Diode) — — 480 Diode Forward Voltage — 0.70 1.3 Reverse Recovery Time — 19.2 — Reverse Recovery Charge — 12.0 — Units A A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.1A, VGS=0V TJ = 25°C, IF =75A, di/dt = 100A/μs www.goodark.com Page 2 of 7 Rev.1.0 Test Circuits and Waveforms SSFT4004 40V N-Channel MOSFET Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max junction temperature. ③The power dissipation PD is based on max junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. www.goodark.com Page 3 of 7 Rev.1.0 Typical Electrical and Thermal Characteristics SSFT4004 40V N-Channel MOSFET Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature www.goodark.com Page 4 of 7 Rev.1.0 Typical Electrical and Thermal Characteristics SSFT4004 40V N-Channel MOSFET Figure 5. Maximum Drain Current Vs. Case Temperature Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.goodark.com Page 5 of 7 Rev.1.0 Mechanical Data TO220 PACKAGE OUTLINE DIMENSION_GN E SSFT4004 40V N-Channel MOSFET A D D1 b ФP ФP1 b1 ϴ1 ϴ2 L D2 ϴ3 A1 ϴ4 Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP 1 e L ϴ1 ϴ2 ϴ3 ϴ4 e Dimension In Millimeters Min Nom Max - 1.300 - 2.200 2.400 2.600 - 1.270 - 1.270 1.370 1.470 - 0.500 - - 15.600 - - 28.700 - - 9.150 - 9.900 10.000 10.100 - 10.160 - - 3.600 - 1.500 2.54BSC 12.900 13.100 13.300 - 70 - - 70 - 30 - - 30 - c E1 Dimension In Inches Min Nom Max - 0.051 - 0.087 0.094 0.102 - 0.050 - 0.050 0.054 0.058 - 0.020 - - 0.614 - - 1.130 - - 0.360 - 0.390 0..


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