SSFT3904

Main Product Characteristics VDSS RDS(on) ID 30V 2.6mΩ (typ.) 110A Features and Benefits  Advanced MOSFET process technology  Ideal for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175ºC operating temperature TO-220 SSFT3904 30V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description The SSFT3904 utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable device for use in power switching applications and a wide variety of other applications. Absolute Max Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ, TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH② Avalanche Current @ L=0.1mH② Operating Junction and Storage Temperature Range Max. 110 80 440 100 0.55 30 ± 20 320 80 -55 to + 175 Units A W W/°C V V mJ A °C 1/7 Thermal Resistance SSFT3904 30V N-Channel MOSFET Symbol RθJC Characteristics Junction-to-Case③ Typ. — Max. 1.5 Units ºC/W Junction-to-Ambient (t ≤ 10s) ④ RθJA — 62 ºC/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ºC/W Electrical Characteristics @TA=25ºC unless otherw...