SSFT4003

                               Main Product Characteristics: VDSS 40V RDS(on) 2.4mΩ(typ.) ID 200A ① Features and Benefits: TO-220 SSFT4003 „ Advanced MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSFT4003/SSFT4003A    TO-263 SSFT4003A     Schematic diagram    Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Max. 200① 135① 750 220 1.5 40 ± 24 912 78 -55 to +175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO., LTD. 2012.09.17 www.silikron.com  Version: 2.1 page 1 of 9                       SSFT4003/SSFT4003A  Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ ...