SSFT3906

                                 Main Product Characteristics: VDSS 30V RDS(on) 3.2mohm(typ.) ID 90A Features and Benefits: TO220  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSFT3906  SSFT3906 Marking and pin Assignment  Schematic diagram  Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Max. 90 60 180 91 0.61 30 ± 20 304 45 -55 to + 175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2011.08.08 www.silikron.com  Version : 2.0 page 1 of 7                                  SSFT3906  Thermal Resistance Symbol RθJC Characterizes Junction-to-case③ Typ. — Max. 1.65 Uni...