Document
Main Product Characteristics:
VDSS
35V
RDS(on) 3.0mohm(typ.)
ID 110A
Features and Benefits:
TO220
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSFT3904U
SSFT3904U
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH Avalanche Current @ L=0.1mH Operating Junction and Storage Temperature Range
Max. 110 80 440 100 0.55 35 ±20 320 80 -55 to + 175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO., LTD.
2011.11.05 www.silikron.com
Version: 1.1
page 1 of 8
SSFT3904U
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 1.5 62 40
Units ℃/W ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
35 — — — —
1 — — — —
-100 — — — — — — — — — —
Typ. — 3 3.9 5 5.8 — 1.1 — — — — 57 17 26 14.5 73.9 99.7
107.1 5520 623 594
Max. — 4 — 6 — 3 — 1 50 100 — — — — — — — — — — —
Units V mΩ mΩ V μA nA nC
ns
pF
Source-Drain Ratings and Characteristics
Conditions VGS = 0V, ID = 250μA VGS=10V,ID =30A TJ = 125℃ VGS=4.5V,ID =16A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 35V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V VDS=15V, ID=30A, VGS=10V
VGS=4.5V, VDS=15V, RGEN=4.7Ω, ID=30A
VGS = 0V VDS = 15V ƒ = 600KHz
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 110
— — 440
— 0.67 1.3 — 22.1 — — 8.7 —
Units A
A V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.1A, VGS=0V TJ = 25°C, IF =30A, di/dt = 10.