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SSFT3904U Dataheets PDF



Part Number SSFT3904U
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description MOSFET
Datasheet SSFT3904U DatasheetSSFT3904U Datasheet (PDF)

Main Product Characteristics: VDSS 35V RDS(on) 3.0mohm(typ.) ID 110A Features and Benefits: TO220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSFT3904U SSFT3904U Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high c.

  SSFT3904U   SSFT3904U



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Main Product Characteristics: VDSS 35V RDS(on) 3.0mohm(typ.) ID 110A Features and Benefits: TO220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSFT3904U SSFT3904U Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH Avalanche Current @ L=0.1mH Operating Junction and Storage Temperature Range Max. 110 80 440 100 0.55 35 ±20 320 80 -55 to + 175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO., LTD. 2011.11.05 www.silikron.com Version: 1.1 page 1 of 8 SSFT3904U Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 1.5 62 40 Units ℃/W ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 35 — — — — 1 — — — — -100 — — — — — — — — — — Typ. — 3 3.9 5 5.8 — 1.1 — — — — 57 17 26 14.5 73.9 99.7 107.1 5520 623 594 Max. — 4 — 6 — 3 — 1 50 100 — — — — — — — — — — — Units V mΩ mΩ V μA nA nC ns pF Source-Drain Ratings and Characteristics Conditions VGS = 0V, ID = 250μA VGS=10V,ID =30A TJ = 125℃ VGS=4.5V,ID =16A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 35V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V VDS=15V, ID=30A, VGS=10V VGS=4.5V, VDS=15V, RGEN=4.7Ω, ID=30A VGS = 0V VDS = 15V ƒ = 600KHz Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 110 — — 440 — 0.67 1.3 — 22.1 — — 8.7 — Units A A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.1A, VGS=0V TJ = 25°C, IF =30A, di/dt = 10.


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