BAS40V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Diodes BAS40V SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Fast Switching Marking: KAN Solid dot = Pin1 indicate. SOT-563 654 1 23 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature range Symbol VRM VR IO Pd RθJA TJ TSTG Limit 40 200 150 667 125 -55~+150 Unit V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse breakdown voltage V(BR) IR= 10μA 40 Reverse voltage leakage current Forward voltage Total capacitance Reverse recovery time IR VR=30V VF IF=1mA IF=40mA CT VR=0,f=1MHz t r r IF=10mA, IR=IF=1mA RL=100Ω Max 200 380 1000 5 5 Unit V nA mV pF ns www.cj-elec.com 1 E,Oct,2015 Typical Characteristics FORWARD CURRENT I (mA) F 200 Pulsed 100 Forward Characteristics T =100℃ a 10 1 T =25℃ a 0.1 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 Capacitance Characteristics 4.0 T =25℃ a f=1MHz 3.5 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 25 REVERSE VOLTAGE V (V) R 30 POWER DISSIPATION P (W) D REVERSE CURRENT I (uA) R 100 Pulsed 10 Reverse Characteristics T =100℃ a 1 0.1 0.01 T =25℃ a 1E-3 0 10 20 30 REVERSE VOLTAGE V (V) R Power Derating Curve 0.20 40 0.15 0.10 0.05 0.00 0 25 50 75 100 AMBIENT TEMPERATURE T (...