BAS40V

SCHOTTK Y DIODE BAS40V SOT-563 FEATURES z Low Forward Voltage Drop z Fast Switching 1 Marking: KAN Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Thermal Resistance. Junction to Ambient Air Junction temperature Storage temperature range Symbol VRM VR IO Pd RθJA TJ TSTG Limits 40 200 150 833 -55-125 -65-150 Unit V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX Reverse breakdown voltage V(BR) IR= 10μA 40 Reverse voltage leakage current IR VR=30V 200 Forward voltage Total capacitance VF IF=1mA IF=40mA CT VR=0,f=1MHz 380 1000 5 Reverse recovery time t r r IF=10mA, IR=IF=1mA RL=100Ω 5 UNIT V nA mV pF nS 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 Typical Characteristics BAS40V 2 JinYu semiconductor www.htsemi.com Date:2011/ 05 ...