JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
BAS70T/-04T/-05T/06T SCHOTTKY BA...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
BAS70T/-04T/-05T/06T
SCHOTTKY BARRIER DIODE
FEATURES z Low Turn-on Voltage z Fast Switching
SOT-523
BAS70T Marking: 7C
BAS70-04T Marking: 7D
BAS70-05T Marking: 7E
MARKING: BAS707BAS70-047BAS70-057
BAS70-06T Marking: 7F
BAS70-067
Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Forward Continuous Current
Symbol VRRM VRWM VR
IFM
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
IFSM
Power Dissipation Thermal Resistance Junction to Ambient
PD RθJA
Junction temperature Storage Temperature
TJ TSTG
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Limit
70
70 100 150 667 125 -55~+150
Unit
V
mA mA mW ℃/W ℃
℃
Parameter Reverse breakdown voltage Reverse voltage leakag e current Forward voltage Diode capacitance Reveres recovery time
Symbol
Test conditions
V(BR)
IR=10µA
IR VR=50V
VF
IF=1mA IF=15mA
CD VR=0, f=1MHz
trr
IF=IR=10mA,Irr=0.1xIR, RL=100Ω
Min Max
Unit
70 V
100
410 1000
2
nA
mV
pF
5 ns
www.cj-elec.com
1
E,Oct,2015
Typical Characteristics
FORWARD CURRENT I (mA) F
REVERSE CURRENT I (nA) R
T
a
=100
℃
Forward Characteristics
70
Pulsed
10
T a
=25℃
Reverse Characteristics
10000
Pulsed
1000
T =100 ℃ a
100
T =25 ℃ a
10
1 200 400 600 800 1000
FORWARD VOLTAGE V (...