BAS70W-04

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAS70W/-04/-05/-06 SCHOKKTY BARRIER DIODE FEATURES z Low turn-on voltage z Fast switching z Also available in lead free version SOT-323 BAS70W Marking: K73 BAS70W-04 Marking: K74 BAS70W-05 Marking: K75 MARKING: BAS70W BAS70W-04 BAS70W-05 BAS70W-06 BAS70W-06 Marking: K76 Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS @Ta=25℃ Symbol Parameter VR DC Voltage IF Forward Continuous Current IFSM Non-Repetitive Peak Forward Surge Current @ t = 8.3ms PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient TJ Junction Temperature Tstg Storage Temperature Value 70 70 100 200 500 125 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time Symbol Test conditions V(BR) IR= 10µA IR VR=50V VF IF=1mA IF=15mA CD VR=0V,f=1MHz trr IF=IR=10mA,Irr=0.1xIR, RL=100Ω Min 70 www.cj-elec.com 1 Unit V mA mA mW ℃/W ℃ ℃ Max 100 410 1000 2 5 Unit V nA mV pF ns E,Oct,2015 Typical Characteristics 70 Pulsed Forward Characteristics 10 =100℃ T a =25℃ FORWARD CURRENT I (mA) F 1 T a 0.1 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 REVERSE CURRENT I (uA) R 100 Pulsed 10 1 Reverse Characteristics T =100℃ a 0.1 T =25℃ a 0.01 1E-3 0 10 20 30 40 50 60 70 REVERSE VOLTAGE V (V) R CA...