SCHOTTKY BARRIER DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
BAS70W/-04/-05/-06 SCHOKKTY BARRI...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
BAS70W/-04/-05/-06 SCHOKKTY BARRIER DIODE
FEATURES z Low turn-on voltage z Fast switching z Also available in lead free version
SOT-323
BAS70W Marking: K73
BAS70W-04 Marking: K74 BAS70W-05 Marking: K75
MARKING:
BAS70W
BAS70W-04
BAS70W-05
BAS70W-06
BAS70W-06 Marking: K76
Solid dot = Green molding compound device,if none, the normal device.
MAXIMUM RATINGS @Ta=25℃
Symbol
Parameter
VR DC Voltage IF Forward Continuous Current
IFSM Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient TJ Junction Temperature Tstg Storage Temperature
Value 70 70
100 200
500 125 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time
Symbol
Test conditions
V(BR)
IR= 10µA
IR VR=50V
VF
IF=1mA IF=15mA
CD VR=0V,f=1MHz
trr
IF=IR=10mA,Irr=0.1xIR, RL=100Ω
Min 70
www.cj-elec.com
1
Unit V mA
mA mW
℃/W ℃ ℃
Max
100 410 1000
2 5
Unit V nA
mV pF ns
E,Oct,2015
Typical Characteristics
70
Pulsed
Forward Characteristics
10
=100℃
T a
=25℃
FORWARD CURRENT I (mA) F
1
T a
0.1
0.01 0.0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE V (V) F
1.0
REVERSE CURRENT I (uA) R
100
Pulsed
10
1
Reverse Characteristics
T =100℃ a
0.1
T =25℃ a
0.01
1E-3 0
10 20 30 40 50 60 70
REVERSE VOLTAGE V (V) R
CA...
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