2SD2345. D2345 Datasheet

D2345 2SD2345. Datasheet pdf. Equivalent

Part D2345
Description 2SD2345
Feature Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification s Features q H.
Manufacture Panasonic
Datasheet
Download D2345 Datasheet




D2345
Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q High emitter to base voltage VEBO.
q Low noise voltage NV.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
50
40
15
100
50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : 1Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
50
40
15
400
100 nA
1 µA
V
V
V
2000
0.05 0.2
V
120 MHz
*hFE Rank classification
Rank
R
S
T
hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000
1



D2345
Transistor
PC — Ta
150
125
100
75
50
25
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
Cob — VCB
8
IE=0
7 f=1MHz
Ta=25˚C
6
5
4
3
2
1
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
160
Ta=25˚C
140
120
IB=100µA
100 90µA
80µA
70µA
80 60µA
50µA
60 40µA
30µA
40
20µA
20
10µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1800
1500
hFE — IC
VCE=10V
1200
900
600
Ta=75˚C
25˚C
–25˚C
300
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
NV — IC
100 VCE=10V
GV=80dB
Function=FLAT
80 Ta=25˚C
Rg=100k
60
22k
40
5k
20
0
0.01 0.03 0.1 0.3
1
Collector current IC (mA)
2SD2345
IC — VBE
120
25˚C
100
Ta=75˚C –25˚C
VCE=10V
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
fT — IE
250 VCB=10V
Ta=25˚C
200
150
100
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
NV — VCE
100
Rg=100k
80
60
22k
40
5k
20
IC=1mA
GV=80dB
Function=FLAT
0 Ta=25˚C
1
3
10 30
100
Collector to emitter voltage VCE (V)
2







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