Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1710
DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Fast Switching Speed
APPLICATIONS ·Power supplies, converters and power motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=25℃ 6 A
Ptot Total Dissipation@TC=25℃
35 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
2SK1710
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID=1mA VGS= 10V; ID= 3A VGS= ±30V;VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
MIN MAX UNIT
600 V
2.0 4.0
V
1.3 Ω
±100
nA
1 mA
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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.