2SK1807

isc N-Channel MOSFET Transistor 2SK1807 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Breakdown Voltage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A Ptot Total Dissipation@TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1807 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 100μA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VDF Body to drain diode forward voltage IS = 4 A, VGS = 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2A IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 720V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=10V; VGS=0V; fT=1MHz tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time VGS=10V; ID=2A; VDD=200V; RL=15Ω MIN TYPE MAX UNIT 900 V ±30 V 2.0 3.0 V 0.9 V 4.0 Ω ±10 μA 250 μA 740 305 pF 150 60 15 ns 80 100 NOTIC...