2SK1807
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switc...
2SK1807
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
G
123
REJ03G0974-0200 (Previous: ADE-208-1321)
Rev.2.00 Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1807
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch
Tstg
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test
Symbol V(BR)DSS V(BR)GSS
IGSS IDSS VGS(off) RDS(on)
|yfs| Ciss Coss Crss td(on)
tr td(off)
tf VDF trr
Min 900 ±30 — — 2.0 —
1.7 — — — — — — — — —
Typ — — — — — 3.0
2.7 740 305 150 15 60 100 80 0.9 800
Ratings 900 ±30 4 10 4 60 150
–55 to +150...