2SK1833

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Diving circuit for a solenoid and motor ·Control equipment ·Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 2.5 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W 2SK1833 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1833 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= 25V; ID=1mA 2.0 5.0 V VDF Body to drain diode forward voltage IS= 2.5A, VGS = 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A 3.2 4.0 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 1 μA Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=20V; VGS=0V; fT=1MHz 300 400 20 23 pF 55 48 ton ...