2SK1876

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Fast Switching Speed ·Low on-resistance ·For switchinggregulator,DC-DC Converter ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 75 ℃/W 2SK1876 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 100μA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VDF Body to drain diode forward voltage IS= 5A, VGS = 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=10V; VGS=0V; fT=1MHz tr Rise...