2SK1913

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed ,high current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 2SK1913 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1913 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VDF Body to drain diode forward voltage IF = 4 A, VGS = 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 Ciss Input capacitance Crss Reverse transfer capacitance VDS=25V;VGS=0V;fT=1MHz Coss Output capacitance tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=2.5A; VDD=200V; RL=80Ω toff Turn-off time MIN TY...