isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
3.5
A
ID(puls)
Pulsed drain current
14
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
3.125 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
75
℃/W
2SK2019-01
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
2SK2019-01
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID= 1mA VDS= VGS; ID=1mA IS= 3.5A ;VGS= 0 VGS= 10V; ID= 1.5A VGS= ±...