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2SA1943A

JILIN SINO

PNP Epitaxial Silicon Transistor

PNP Silicon PNP Epitaxial Transistor R 2SA1943A  :VCEO=-230V (min)  2SC5200A  100W (RoHS) Package TO-3PL(...


JILIN SINO

2SA1943A

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Description
PNP Silicon PNP Epitaxial Transistor R 2SA1943A  :VCEO=-230V (min)  2SC5200A  100W (RoHS) Package TO-3PL(T) APPLICATIONS  Power Amplifier Applications FEATURES High collector voltage:VCEO=-230V (min) Complementary to 2SC5200A Recommended for 100-W high-fidelity audio frequency amplifier output RoHS product TO-247 1 BASE 2 ()COLLECTOR (HEAT SINK) 3 EMITTER ORDER MESSAGE Order codes Marking 2SA1943A-O-AL-N-D TTA1943 2SA1943A -O-AL-N-B TTA1943 2SA1943A –O-W –N-B TTA1943 Halogen Free NO NO NO Package Packaging TO-3PL(T) TO-3PL(T) TO-247 Foam Box Tube Tube Weight 9.53g(typ) 9.53g(typ) 6.03g(typ) :201602B 1/5 R 2SA1943A ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) Parameter — Collector- Base Voltage — Collector- Emitter Voltage — Emitter-Base Voltage Collector Current Base Current TO-247 Collector Dissipation(Tc=25℃) TO-3PL Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC PC Tj Tstg Value -230 -230 -5 -15 -1.5 120 160 150 -55~150 Unit V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTIC (Tc=25℃ unless otherwise noted) Parameter Tests conditions ICBO VCB=-230V,IE=0 IEBO VEB=-5V,IC=0 V(BR)CEO Ic=-50Ma,IB=0 Hfe VCE=-5V,IC=-1.0A VCE=-5V,IC=-7.0A VCE(sat) IC=-8.0A,IB=-0.8A VBE VCE=-5V,IC=-7.0A Ft VCE=-5V, Ic=-1.0A COb VCE=-10V, IE =0,f=1MHz Value(min) Value(typ) Value(max) - - -5.0 - - -5.0 -230 - - 80 - 160 35 - - - - -3.0 - - ...




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