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2SC5198

JILIN SINO

Silicon NPN Transistor

NPN Silicon NPN Triple Diffused Transistor R 2SC5198 VCEO=140V (min) 2SA1941 70W RoHS APPLICATIONS Power Amplifier App...


JILIN SINO

2SC5198

File Download Download 2SC5198 Datasheet


Description
NPN Silicon NPN Triple Diffused Transistor R 2SC5198 VCEO=140V (min) 2SA1941 70W RoHS APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=140V (min) Complementary to 2SA1941 Recommended for 70-W high-fidelity audio frequency amplifier output RoHS product Package TO-247 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER ORDER MESSAGE Order codes Marking Halogen Free Package 2SC5198-O-W-N-B 2SC5198 NO TO-247 Packaging Tube Weight 6.03g(typ) ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) Parameter Symbol Value Unit — Collector- Base Voltage VCBO 140 V — Collector- Emitter Voltage VCEO 140 V — Emitter-Base Voltage VEBO 5V Collector Current IC 15 A Base Current IB 1.5 A Collector Dissipation(Tc=25 ) PC 130 W Junction Temperature Tj 150 Storage Temperature Tstg -55~150 201311C 1/5 R ELECTRICAL CHARACTERISTIC 2SC5198 Parameter Tests conditions ICBO VCB=140V,IE=0 IEBO VEB=5V,IC=0 V(BR)CEO Ic=50mA,IB=0 hFE VCE=5V,IC=1.0A VCE=5V,IC=5.0A VCE(sat) IC=7.0A,IB=0.7A VBE VCE=5V,IC=5.0A fT VCE=5V, Ic=1.0A COb VCE=10V, IE =0,f=1MHz Value(min) Value(typ) Value(max) - - 5.0 - - 5.0 140 - - 80 - 160 35 - - - - 2.0 - - 1.5 - 30 - - 170 - Unit µA mA V V V MHz pF THERMAL CHARACTERISTIC Parameter Thermal Resistance Junction Case TO-247 Symbo min max Unit Rth(j-c) - 0.962 /W MARKING 201311C 2/5 Collector corrent IC (A) R 2SC5198 ELECTRICAL CHARACTERISTICS (curves) IC-VCE Common emitter Tc = 25°C Sin...




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