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2SC5200B

JILIN SINO

Silicon NPN Transistor

NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z:VCEO=250V (min) z 2SA1943B z 100W z(RoHS) APPLICATIONS...


JILIN SINO

2SC5200B

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Description
NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z:VCEO=250V (min) z 2SA1943B z 100W z(RoHS) APPLICATIONS z Power Amplifier Applications FEATURES zHigh collector voltage:VCEO=250V (min) zComplementary to 2SA1943 B zRecommended for 100-W high-fidelity audio frequency amplifier output zRoHS product Package TO-3PLT TO-3PB 1 BASE 2 ()COLLECTOR (HEAT SINK) 3 EMITTER ORDER MESSAGE Order codes Marking 2SC5200B-O-AB -N-B 2SC5200B -O-AL-N-B 2SC5200B -O-AL-N-D 2SC5200 2SC5200 2SC5200 Halogen Free NO NO NO Package Packaging TO-3PB TO-3PLT TO-3PLT Tube Tube Foam Box Weight 6.03g(typ) 9.53g(typ) 9.53g(typ) :201601A 1/5 R 2SC5200B ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) — Parameter Collector- Base Voltage — Collector- Emitter Voltage — Emitter-Base Voltage Collector Current Base Current TO-3PB Collector Dissipation(Tc=25℃) TO-3PL Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC PC Tj Tstg Value 350 250 5 16 1.6 150 200 150 -65~150 Unit V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTIC(Tc=25℃ unless otherwise noted) Parameter ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(ON) fT COb Tests conditions VCB=300V,IE=0 VEB=5.0V,IC=0 Ic=50mA,IB=0 VCE=5.0V,IC=0.5A VCE=5.0V,IC=1.0A VCE=5.0V,IC=3.0A IC=5.0A,IB=0.5A VCE=5.0V,IC=5.0A VCE=5.0V, Ic=1.0A VCE=10V, IE =0,f=1MHz Value(min) Value(typ) Value(max) - - 10.0 - - 5.0 250 - - 75 - 135 75 - 135 75 - 135 - -...




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