NPN Silicon NPN Triple Diffused Transistor
R
2SC5200B
z
z:VCEO=250V (min) z 2SA1943B z 100W
z(RoHS)
APPLICATIONS...
NPN Silicon
NPN Triple Diffused
Transistor
R
2SC5200B
z
z:VCEO=250V (min) z 2SA1943B z 100W
z(RoHS)
APPLICATIONS
z Power Amplifier Applications
FEATURES
zHigh collector voltage:VCEO=250V (min) zComplementary to 2SA1943 B zRecommended for 100-W high-fidelity audio
frequency amplifier output zRoHS product
Package
TO-3PLT
TO-3PB
1 BASE 2 ()COLLECTOR (HEAT SINK) 3 EMITTER
ORDER MESSAGE
Order codes
Marking
2SC5200B-O-AB -N-B 2SC5200B -O-AL-N-B 2SC5200B -O-AL-N-D
2SC5200 2SC5200 2SC5200
Halogen Free
NO NO NO
Package
Packaging
TO-3PB TO-3PLT TO-3PLT
Tube Tube Foam Box
Weight
6.03g(typ) 9.53g(typ) 9.53g(typ)
:201601A
1/5
R 2SC5200B
ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted)
—
Parameter Collector- Base Voltage
—
Collector- Emitter Voltage
—
Emitter-Base Voltage
Collector Current
Base Current
TO-3PB Collector Dissipation(Tc=25℃)
TO-3PL Collector Dissipation(Tc=25℃)
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC IB PC PC Tj Tstg
Value 350 250
5 16 1.6 150 200 150 -65~150
Unit V V V A A W W ℃ ℃
ELECTRICAL CHARACTERISTIC(Tc=25℃ unless otherwise noted)
Parameter
ICBO IEBO V(BR)CEO
hFE
VCE(sat) VBE(ON) fT COb
Tests conditions VCB=300V,IE=0 VEB=5.0V,IC=0 Ic=50mA,IB=0 VCE=5.0V,IC=0.5A VCE=5.0V,IC=1.0A VCE=5.0V,IC=3.0A IC=5.0A,IB=0.5A VCE=5.0V,IC=5.0A VCE=5.0V, Ic=1.0A VCE=10V, IE =0,f=1MHz
Value(min) Value(typ) Value(max)
- - 10.0
- - 5.0
250 -
-
75 - 135
75 - 135
75 - 135
- -...